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2SK2084S Folha de dados(PDF) 2 Page - Renesas Technology Corp

Nome de Peças 2SK2084S
Descrição Electrónicos  Silicon N Channel MOS FET
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2084S Folha de dados(HTML) 2 Page - Renesas Technology Corp

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2SK2084(L), 2SK2084(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
7
A
Drain peak current
ID(pulse)*
1
28
A
Body to drain diode reverse drain current
IDR
7
A
Channel dissipation
Pch*
2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
20
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source leak current
IGSS
±10
µA
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
100
µA
VDS = 16 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
2.5
V
ID = 1 mA, VDS = 10 V
0.04
0.053
ID = 4 A, VGS = 10 V*
3
Static drain to source on state
resistance
RDS(on)
0.058
0.075
ID = 4 A, VGS = 4 V*
3
Forward transfer admittance
|yfs|
5
9
S
ID = 4 A, VDS = 10 V*
3
Input capacitance
Ciss
800
pF
Output capacitance
Coss
680
pF
Reverse transfer capacitance
Crss
165
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
15
ns
Rise time
tr
60
ns
Turn-off delay time
td(off)
100
ns
Fall time
tf
80
ns
ID = 4 A, VGS = 10 V,
RL = 5
Body to drain diode forward voltage
VDF
0.9
V
IF = 7 A, VGS = 0
Body to drain diode reverse recovery
time
trr
80
ns
IF = 7 A, VGS = 0,
diF / dt = 20 A /
µs
Note:
3. Pulse Test


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