2SK2373ZE-TL-E datasheet(3/6 Pages) RENESAS

Nome de Peças	2SK2373ZE-TL-E

Descrição Electrónicos	Silicon N Channel MOS FET

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2SK2373

Rev.3.00 Dec 27, 2006 page 3 of 5

Main Characteristics

200

150

100

50

0

50

100

150

200

Ambient Temperature

Ta (

°C)

Maximum Channel Dissipation Curve

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

1

0.1

0.01

0.001

0.3

0.03

0.003

0.1

0.3

1

3

10

30

100

1 ms

Ta = 25

°C

1 shot pulse

Operation in

this area is

limited by RDS(on)

2.0

1.6

1.2

0.8

0.4

0

2

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

46

8

10

5 V

4.5 V

4 V

3.5 V

3 V

VGS = 2.5 V

Pulse Test

0.5

0.4

0.3

0.2

0.1

0

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

VDS = 10 V

12

3

4

5

Ta = –25

°C

75

°C

25

°C

0.5

0.4

0.3

0.2

0.1

0

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

4

8

12

16

20

0.2 A

0.1 A

ID = 0.05 A

Drain Current

ID

(A)

Static Drain to Source on State Resistance

vs. Drain Current

Ta = 25

°C

Pulse Test

0.01 0.02

0.05

0.1

0.2

0.5

1

10 V

VGS = 4 V

10

2

5

1

0.1

0.2

0.5

Nº de peça semelhante - 2SK2373ZE-TL-E

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Hitachi Semiconductor	2SK2373	34Kb / 7P	Silicon N-Channel MOS FET

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Descrição semelhante - 2SK2373ZE-TL-E

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2SK2373ZE-TL-E Folha de dados(PDF) 3 Page - Renesas Technology Corp

2SK2373ZE-TL-E Folha de dados(HTML) 3 Page - Renesas Technology Corp

Nº de peça semelhante - 2SK2373ZE-TL-E

Descrição semelhante - 2SK2373ZE-TL-E

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