2SK2554-E datasheet(4/8 Pages) RENESAS

Nome de Peças	2SK2554-E

Descrição Electrónicos	Silicon N Channel MOS FET

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2SK2554

Rev.6.00 Sep 07, 2005 page 4 of 7

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

0.02

0.016

0.012

0.008

0.004

–40

0

40

80

120

160

0

Pulse Test

ID = 50 A

VGS = 4 V

10 V

10, 20 A

10, 20, 50 A

0.1

0.3

1

3

10

30

100

VDS = 10 V

Pulse Test

500

100

200

20

50

10

2

5

1

0.5

25

°C

Tc = –25

°C

75

°C

0.1

0.3

1

3

10

30

100

500

200

100

20

50

10

5

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

010

20

30

40

50

100000

30000

10000

3000

1000

300

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

100

80

60

40

20

0

20

16

12

8

4

80

160

240

320

400

0

VDD = 10 V

25 V

50 V

ID = 75 A

VGS

VDS

VDD = 50 V

25 V

10 V

0.1

0.3

1

3

10

30

100

10000

3000

1000

300

100

30

10

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty < 1 %

tf

tr

td(on)

td(off)

Nº de peça semelhante - 2SK2554-E

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Descrição semelhante - 2SK2554-E

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2SK2554-E Folha de dados(PDF) 4 Page - Renesas Technology Corp

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Nº de peça semelhante - 2SK2554-E

Descrição semelhante - 2SK2554-E

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