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2SK2957 Folha de dados(PDF) 4 Page - Renesas Technology Corp |
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2SK2957 Folha de dados(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK2957(L), 2SK2957(S) Rev.4.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 20 16 12 8 4 –40 0 40 80 120 160 0 0.1 0.2 1 2 10 10 5 1 2 0.5 VGS = 4 V 10 V 5 ,10, 20 A 20 20 50 50 Pulse Test ID = 5, 10, 20 A 0.5 5 25 °C Tc = –25 °C 75 °C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 010 20 30 40 50 300 10000 1000 3000 50 40 30 20 10 0 20 16 12 8 4 20 40 60 80 100 0 1000 500 100 200 20 50 10 0.1 0.2 2 10 50 100 50 10 20 2 5 1 di / dt = 50 A / µs VGS = 0, Ta = 25°C 100 300 20 1 10 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 50 A VGS VDS VDD = 5 V 10 V 25 V VDD = 25 V 10 V 5 V 0.5 5 VGS = 10 V, VDD = 10 V PW = 5 µs, duty < 1 % tr td(on) td(off) tf |
Nº de peça semelhante - 2SK2957 |
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Descrição semelhante - 2SK2957 |
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