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2SK2869S Folha de dados(PDF) 4 Page - Renesas Technology Corp

Nome de Peças 2SK2869S
Descrição Electrónicos  Silicon N Channel MOS FET High Speed Power Switching
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK2869S Folha de dados(HTML) 4 Page - Renesas Technology Corp

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2SK2869(L), 2SK2869(S)
Rev.2.00 Sep 07, 2005 page 4 of 8
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Switching Characteristics
Drain Current ID (A)
0.10
0.08
0.06
0.04
0.02
–40
0
40
80
120
160
0
0.1
0.3
1
3
10
30
100
50
20
5
10
1
2
0.5
VGS = 4 V
10 V
2, 5 A
10 A
2, 5, 10 A
25
°C
Tc = –25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
010
20
30
40
50
2000
5000
1000
100
200
500
100
80
60
40
20
0
20
16
12
8
4
816
24
32
40
0
1000
500
50
100
20
10
200
1000
300
30
100
3
10
1
0.1
0.3
1
3
10
30
100
di / dt = 50 A /
µs
VGS = 0, Ta = 25°C
10
20
50
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 20 A
VGS
VDS
VDD = 50 V
25 V
10 V
VDD = 50 V
25 V
10 V
tf
tr
td(on)
td(off)
VGS = 10 V, VDD = 30 V
PW = 5
µs, duty < 1 %


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