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2SD1472CTTR-E Folha de dados(PDF) 1 Page - Renesas Technology Corp |
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2SD1472CTTR-E Folha de dados(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Page 1 of 5 2SD1472 Silicon NPN Epitaxial, Darlington REJ03G0792-0300 Rev.3.00 Nov 30, 2007 Application Low frequency power amplifier Outline 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 1 2 3 6 k Ω (Typ) 0.5 k Ω (Typ) ID 1 2 3 RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) Note: Marking is “CT”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 1.5 A Collector peak current iC(peak)* 1 3.0 A Collector power dissipation PC* 2 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C E to C diode forward current ID 1.5 A Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) |
Nº de peça semelhante - 2SD1472CTTR-E |
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Descrição semelhante - 2SD1472CTTR-E |
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