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2SJ351 Folha de dados(PDF) 2 Page - Renesas Technology Corp

Nome de Peças 2SJ351
Descrição Electrónicos  Silicon P Channel MOS FET
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ351 Folha de dados(HTML) 2 Page - Renesas Technology Corp

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2SJ351, 2SJ352
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
2SJ351
–180
Drain to source voltage
2SJ352
VDSX
–200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–8
A
Body to drain diode reverse drain current
IDR
–8
A
Channel dissipation
Pch
Note 1
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
2SJ351
–180
V
Drain to source breakdown
voltage
2SJ352
V (BR) DSX
–200
V
ID = –10 mA, VGS = 10 V
Gate to source breakdown voltage
V (BR) GSS
±20
V
IG =
±100 µA, VDS = 0
Gate to source cutoff voltage
VGS (off)
–0.15
–1.45
V
ID = –100 mA, VDS = –10 V
Drain to source saturation voltage
VDS (sat)
–12
V
ID = –8 A, VGS = 0
Note 2
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = –3 A, VDS = –10 V
Note 2
Input capacitance
Ciss
800
pF
Output capacitance
Coss
1000
pF
Reverse transfer capacitance
Crss
18
pF
VGS = 5 V, VDS = –10 V,
f = 1 MHz
Turn-on time
ton
320
ns
Turn-off time
toff
120
ns
VDD = –30 V ID = –4 A
Note:
2. Pulse test


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