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2SJ410-E Folha de dados(PDF) 2 Page - Renesas Technology Corp |
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2SJ410-E Folha de dados(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page 2SJ410 Rev.3.00 Jun 05, 2006 page 2 of 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –200 V Gate to source voltage VGSS ±20 V Drain current ID –6 A Drain peak current ID (pulse) Note 1 –24 A Body to drain diode reverse drain current IDR –6 A Channel dissipation Pch Note 2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –200 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — –250 µA VDS = –160 V, VGS = 0 Gate to source cutoff voltage VGS (off) –2.0 — –4.0 V ID = –1 mA, VDS = –10 V Static drain to source on state resistance RDS (on) — 0.7 0.85 Ω ID = –3 A, VGS = –10 V Note 3 Forward transfer admittance |yfs| 2.0 3.2 — S ID = –3 A, VDS = –10 V Note 3 Input capacitance Ciss — 900 — pF Output capacitance Coss — 280 — pF Reverse transfer capacitance Crss — 65 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 18 — ns Rise time tr — 50 — ns Turn-off delay time td (off) — 90 — ns Fall time tf — 40 — ns ID = –3 A VGS = –10 V RL = 10 Ω Body to drain diode forward voltage VDF — –1.0 — V IF = –6 A, VGS = 0 Body to drain diode reverse recovery time trr — 220 — ns IF = –6 A, VGS = 0 diF/dt = 50 A/ µs Note: 3. Pulse test |
Nº de peça semelhante - 2SJ410-E |
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Descrição semelhante - 2SJ410-E |
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