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2SJ574 Folha de dados(PDF) 5 Page - Renesas Technology Corp

Nome de Peças 2SJ574
Descrição Electrónicos  Silicon P Channel MOS FET High Speed Switching
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Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ574 Folha de dados(HTML) 5 Page - Renesas Technology Corp

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2SJ574
3
Main Characteristics
-0.1
-1.0
-10
-50
800
600
400
200
0
50
100
150
200
-5
-1.0
-0.1
-0.01
-0.001
10 µs
PW
=
10
ms
(1
shot)
DC
Operation
Drain to Source Voltage
V
(V)
DS
Maximum Safe Operation Area
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4-
-6
-8
-10
-7 V
V
= -3V
GS
Pulse Test
-6 V
-5 V
-4 V
Typical Output Characteristics
Drain to Source Voltage
V
(V)
DS
Operation in this area
is limited by RDS(on)
Ambient Temperature
Ta ( °C)
Power vs. Temperature Derating
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-4
-6
-8
-10
Tc = –25 °C
75 °C
V
= -10 V
Pulse Test
DS
25 °C
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
100 µs
1 ms
*Value on the alumina ceramic board.(12.5x20x0.7mm)
-0.0005
-0.002
-0.005
-0.02
-0.05
-0.2
-0.5
-2
-0.05
-0.2 -0.5
-2
-5
-20
Ta=25 °C
Value on the alumina ceramic board.(12.5x20x0.7mm)


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Descrição semelhante - 2SJ574

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