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STK30N2LLH5 Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STK30N2LLH5
Descrição Electrónicos  N-channel 25 V, 0.0024 廓, 30 A, PolarPAK짰 STripFET?줧 Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STK30N2LLH5 Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STK30N2LLH5
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
25
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
12.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 15 A
VGS= 4.5 V, ID= 15 A
0.0024
0.003
0.0029
0.0036
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
2290
555
90
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 30 A
VGS =4.5 V
(see Figure 3)
18
TBD
TBD
nC
nC
nC
Qgs1
Qgs2
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
VDD=15 V, ID = 30 A
VGS =4.5 V
(see Figure 8)
TBD
TBD
nC
nC
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
open drain
TBD


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