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IRF510 Folha de dados(PDF) 4 Page - Vishay Siliconix |
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IRF510 Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91015 4 S-81377-Rev. A, 30-Jun-08 IRF510, SiHF510 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 400 320 240 160 0 80 100 101 V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd C iss C rss C oss VDS, Drain-to-Source Voltage (V) 91015_05 20 16 12 8 0 4 02 8 6 4 I D = 5.6 A V DS = 20 V For test circuit see figure 13 10 V DS = 50 V V DS = 80 V QG, Total Gate Charge (nC) 91015_06 91015_07 25 °C 175 °C V GS = 0 V 10-1 100 VSD, Source-to-Drain Voltage (V) 0.5 0.9 0.8 0.7 0.6 1.0 1.2 1.1 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 175 °C Single Pulse 0.1 102 2 5 1 2 5 10 2 5 25 1 10 25 102 25 103 91015_08 |
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Descrição semelhante - IRF510 |
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