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IRF640STRRPBF Folha de dados(PDF) 1 Page - Vishay Siliconix |
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IRF640STRRPBF Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91037 www.vishay.com S-81241-Rev. A, 07-Jul-08 1 Power MOSFET IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix FEATURES • Surface Mount • Low-Profile Through-Hole • Available in Tape and Reel • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the last lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF640L/SiHF640L) is available for low-profile applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, RG = 25 Ω, IAS = 18 A (see fig. 12). c. ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRF640/SiHF640 data and test conditions. PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω)VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF640SPbF IRF640STRLPbFa IRF640STRRPbFa IRF640LPbF SiHF640S-E3 SiHF6340STL-E3a SiHF640STR-E3a SiHF640L-E3 SnPb IRF640S IRF640STRLa IRF640STRRa IRF640L SiHF640S SiHF640STLa SiHF640STRa SiHF640L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 18 A TC = 100 °C 11 Pulsed Drain Currenta, e IDM 72 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb, e EAS 580 mJ Avalanche Currenta IAR 18 A Repetiitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 W TA = 25 °C 130 Peak Diode Recovery dV/dtc, e dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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