Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

IRF640STRRPBF Folha de dados(PDF) 1 Page - Vishay Siliconix

Nome de Peças IRF640STRRPBF
Descrição Electrónicos  Power MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF640STRRPBF Folha de dados(HTML) 1 Page - Vishay Siliconix

  IRF640STRRPBF Datasheet HTML 1Page - Vishay Siliconix IRF640STRRPBF Datasheet HTML 2Page - Vishay Siliconix IRF640STRRPBF Datasheet HTML 3Page - Vishay Siliconix IRF640STRRPBF Datasheet HTML 4Page - Vishay Siliconix IRF640STRRPBF Datasheet HTML 5Page - Vishay Siliconix IRF640STRRPBF Datasheet HTML 6Page - Vishay Siliconix IRF640STRRPBF Datasheet HTML 7Page - Vishay Siliconix IRF640STRRPBF Datasheet HTML 8Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
Document Number: 91037
www.vishay.com
S-81241-Rev. A, 07-Jul-08
1
Power MOSFET
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
FEATURES
• Surface Mount
• Low-Profile Through-Hole
• Available in Tape and Reel
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the last lowest possible on-resistance in
any existing surface mount package. The D2PAK is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application. The through-hole version
(IRF640L/SiHF640L) is available for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, RG = 25 Ω, IAS = 18 A (see fig. 12).
c. ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
PRODUCT SUMMARY
VDS (V)
200
RDS(on) (Ω)VGS = 10 V
0.18
Qg (Max.) (nC)
70
Qgs (nC)
13
Qgd (nC)
39
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK
(TO-263)
G
D
S
I2PAK
(TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRF640SPbF
IRF640STRLPbFa
IRF640STRRPbFa
IRF640LPbF
SiHF640S-E3
SiHF6340STL-E3a
SiHF640STR-E3a
SiHF640L-E3
SnPb
IRF640S
IRF640STRLa
IRF640STRRa
IRF640L
SiHF640S
SiHF640STLa
SiHF640STRa
SiHF640L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
200
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
18
A
TC = 100 °C
11
Pulsed Drain Currenta, e
IDM
72
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energyb, e
EAS
580
mJ
Avalanche Currenta
IAR
18
A
Repetiitive Avalanche Energya
EAR
13
mJ
Maximum Power Dissipation
TC = 25 °C
PD
3.1
W
TA = 25 °C
130
Peak Diode Recovery dV/dtc, e
dV/dt
5.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


Nº de peça semelhante - IRF640STRRPBF

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Vishay Siliconix
IRF640STRRPBFA VISHAY-IRF640STRRPBFA Datasheet
237Kb / 10P
   Power MOSFET
01-Jan-2022
More results

Descrição semelhante - IRF640STRRPBF

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
ON Semiconductor
NTP35N15G ONSEMI-NTP35N15G Datasheet
161Kb / 7P
   Power MOSFET Power MOSFET
May, 2010 ??Rev. 4
NTMS4937N ONSEMI-NTMS4937N Datasheet
142Kb / 5P
   Power MOSFET Power MOSFET
September, 2009 ??Rev. 0
logo
Fuji Electric
2SK2052-R FUJI-2SK2052-R Datasheet
146Kb / 10P
   Power MOSFET
2SK2100-01MR FUJI-2SK2100-01MR Datasheet
159Kb / 11P
   Power MOSFET
2SK1390-R FUJI-2SK1390-R Datasheet
341Kb / 10P
   Power MOSFET
2SK2849-01L FUJI-2SK2849-01L Datasheet
224Kb / 12P
   Power MOSFET
logo
International Rectifier
IRLIZ44N IRF-IRLIZ44N Datasheet
105Kb / 8P
   Power MOSFET
logo
Fuji Electric
2SK3523-01R FUJI-2SK3523-01R Datasheet
356Kb / 19P
   POWER MOSFET
2SK903 FUJI-2SK903 Datasheet
161Kb / 10P
   POWER MOSFET
logo
Torex Semiconductor
XP135A1145SR TOREX-XP135A1145SR Datasheet
66Kb / 5P
   POWER MOSFET
logo
List of Unclassifed Man...
CMT10N40 ETC1-CMT10N40 Datasheet
158Kb / 5P
   POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com