IRF720 datasheet(2/8 Pages) VISHAY

Nome de Peças	IRF720

Descrição Electrónicos	Power MOSFET

Download	8 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VISHAY [Vishay Siliconix]

Página de início	http://www.vishay.com

Logo

2 / 8 page

www.vishay.com

Document Number: 91043

2

S-81291-Rev. A, 16-Jun-08

IRF720, SiHF720

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

-

Maximum Junction-to-Case (Drain)

RthJC

-2.5

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

400

-

V

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

-

0.51

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 400 V, VGS = 0 V

-

25

µA

VDS = 320 V, VGS = 0 V, TJ = 125 °C

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 2.0 Ab

--

1.8

Ω

Forward Transconductance

gfs

VDS = 50 V, ID = 2.0 Ab

1.7

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

-

410

-

pF

Output Capacitance

Coss

-

120

-

Reverse Transfer Capacitance

Crss

-47

-

Total Gate Charge

Qg

VGS = 10 V

ID = 3.3 A,

VDS = 320 V,

see fig. 6 and 13b

--

20

nC

Gate-Source Charge

Qgs

--

3.3

Gate-Drain Charge

Qgd

--

11

Turn-On Delay Time

td(on)

VDD = 200 V, ID = 3.3 A

RG = 18 Ω, RD = 56 Ω, see fig. 10b

-10

-

ns

Rise Time

tr

-14

-

Turn-Off Delay Time

td(off)

-30

-

Fall Time

tf

-13

-

Internal Drain Inductance

LD

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

LS

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

3.3

A

Pulsed Diode Forward Currenta

ISM

--

13

Body Diode Voltage

VSD

TJ = 25 °C, IS = 3.3 A, VGS = 0 Vb

--

1.6

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/µsb

-

270

600

ns

Body Diode Reverse Recovery Charge

Qrr

-1.4

3.0

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G

Nº de peça semelhante - IRF720

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Samsung semiconductor	IRF720	273Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF720	164Kb / 5P	N-Channel Power MOSFETs, 3.0 A, 350-400 V
Intersil Corporation	IRF720	54Kb / 7P	3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
International Rectifier	IRF720	554Kb / 8P	TRANSISTORS N-CHANNEL
New Jersey Semi-Conduct...	IRF720	1,011Kb / 3P	400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package

More results

Descrição semelhante - IRF720

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	NTP35N15G	161Kb / 7P	Power MOSFET Power MOSFET May, 2010 ??Rev. 4
ON Semiconductor	NTMS4937N	142Kb / 5P	Power MOSFET Power MOSFET September, 2009 ??Rev. 0
Fuji Electric	2SK2052-R	146Kb / 10P	Power MOSFET
	2SK2100-01MR	159Kb / 11P	Power MOSFET
	2SK1390-R	341Kb / 10P	Power MOSFET
	2SK2849-01L	224Kb / 12P	Power MOSFET
International Rectifier	IRLIZ44N	105Kb / 8P	Power MOSFET
Fuji Electric	2SK3523-01R	356Kb / 19P	POWER MOSFET
Fuji Electric	2SK903	161Kb / 10P	POWER MOSFET
Torex Semiconductor	XP135A1145SR	66Kb / 5P	POWER MOSFET
List of Unclassifed Man...	CMT10N40	158Kb / 5P	POWER MOSFET

More results

IRF720 Folha de dados(PDF) 2 Page - Vishay Siliconix

IRF720 Folha de dados(HTML) 2 Page - Vishay Siliconix

Nº de peça semelhante - IRF720

Descrição semelhante - IRF720

Html Pages

1 2 3 4 5 6 7 8

Folha de dados Download

Ligação URL