IRFB13N50A datasheet(1/8 Pages) VISHAY

Nome de Peças	IRFB13N50A

Descrição Electrónicos	Power MOSFET

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Document Number: 91095

www.vishay.com

S-81393-Rev. A, 07-Jul-08

1

Power MOSFET

IRFB13N50A, SiHFB13N50A

Vishay Siliconix

FEATURES

• Lower Gate Charge Qg Results in Simpler Drive

Reqirements

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supplies

• High Speed Power Switching

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 5.7 mH, RG = 25 Ω, IAS =14 A, dV/dt = 7.6 V/ns (see fig. 12a).

c. ISD ≤ 14 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V)

500

RDS(on) (Ω)VGS = 10 V

0.450

Qg (Max.) (nC)

81

Qgs (nC)

20

Qgd (nC)

36

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220

Lead (Pb)-free

IRFB13N50APbF

SiHFB13N50A-E3

SnPb

IRFB13N50A

SiHFB13N50A

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

14

A

TC = 100 °C

9.1

Pulsed Drain Currenta

IDM

56

Linear Derating Factor

2.0

W/°C

Single Pulse Avalanche Energyb

EAS

560

mJ

Avalanche Currenta

IAR

14

A

Repetitive Avalanche Energya

EAR

25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

250

W

Peak Diode Recovery dV/dtc

dV/dt

9.2

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

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