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ILCT6-X007 Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças ILCT6-X007
Descrição Electrónicos  Optocoupler, Phototransistor Output, Dual Channel
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

ILCT6-X007 Folha de dados(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83645
2
Rev. 1.5, 20-Dec-07
ILCT6/MCT6
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Dual Channel
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Rated forward current, DC
60
mA
Peak forward current, DC
1.0 µs pulse, 300 pps
IFM
3.0
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Collector current
IC
30
mA
Collector emitter breakdown voltage
BVCEO
30
V
Power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2.0
mW/°C
COUPLER
Isolation test voltage
VISO
5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Total package dissipation
Ptot
400
mW
Derate linearly from 25 °C
5.33
mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Lead soldering time at 260 °C
10
s
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 20 mA
VF
1.25
1.50
V
Reverse current
VR = 3.0 V
IR
0.1
10
µA
Junction capacitance
VF = 0 V
Cj
25
pF
OUTPUT
Collector emitter breakdown voltage
IC = 1.0 µA, IE = 10 µA
BVCEO
30
65
V
Emitter collector breakdown voltage
IC = 10 μA, IE = 10 µA
BVECO
7.0
10
V
Collector emitter leakage current
VCE = 10 V
ICEO
1.0
100
nA
Collector emitter capacitance
VCE = 0 V
CCE
8.0
pF
COUPLER
Saturation voltage, collector emitter
IC = 2.0 mA, IF = 16 mA
VCEsat
0.40
V
Capacitance (input to output)
f = 1.0 MHz
CIO
0.5
pF
Capacitance between channels
f = 1.0 MHz
0.4
pF
Bandwidth
IC = 2.0 mA, VCC = 10 V,
RL = 100 Ω
150
kHz


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