Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

BF998A Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças BF998A
Descrição Electrónicos  N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BF998A Folha de dados(HTML) 2 Page - Vishay Siliconix

  BF998A Datasheet HTML 1Page - Vishay Siliconix BF998A Datasheet HTML 2Page - Vishay Siliconix BF998A Datasheet HTML 3Page - Vishay Siliconix BF998A Datasheet HTML 4Page - Vishay Siliconix BF998A Datasheet HTML 5Page - Vishay Siliconix BF998A Datasheet HTML 6Page - Vishay Siliconix BF998A Datasheet HTML 7Page - Vishay Siliconix BF998A Datasheet HTML 8Page - Vishay Siliconix BF998A Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
www.vishay.com
2
Document Number 85011
Rev. 1.8, 05-Sep-08
BF998/BF998R/BF998RW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
VDS = 8 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
12
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak
current
± IG1/G2SM
10
mA
Gate 1/Gate 2 - source voltage
± VG1S/G2S
7V
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Symbol
Value
Unit
Channel ambient
1)
RthChA
450
K/W
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Drain - source breakdown
voltage
ID = 10 μA, - VG1S = - VG2S = 4 V
V(BR)DS
12
V
Gate 1 - source breakdown
voltage
± IG1S = 10 mA, VG2S = VDS = 0
± V(BR)G1SS
714
V
Gate 2 - source breakdown
voltage
± IG2S = 10 mA, VG1S = VDS = 0
± V(BR)G2SS
714
V
Gate 1 - source leakage current
± VG1S = 5 V, VG2S = VDS = 0
± IG1SS
50
nA
Gate 2 - source leakage current
± VG2S = 5 V, VG1S = VDS = 0
± IG2SS
50
nA
Drain current
VDS = 8 V, VG1S = 0, VG2S = 4 V
BF998/
BF998R/
BF998RW
IDSS
418
mA
BF998A/
BF998RA/
BF998RAW
IDSS
4
10.5
mA
BF998RBW
IDSS
9.5
18
mA
Gate 1 - source cut-off voltage
VDS = 8 V, VG2S = 4 V, ID = 20 μA- VG1S(OFF)
1.0
2.0
V
Gate 2 - source cut-off voltage
VDS = 8 V, VG1S = 0, ID = 20 μA- VG2S(OFF)
0.6
1.0
V
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward transadmittance
|y21s|
21
24
mS
Gate 1 input capacitance
Cissg1
2.1
2.5
pF
Gate 2 input capacitance
VG1S = 0, VG2S = 4 V
Cissg2
1.1
pF
Feedback capacitance
Crss
25
fF
Output capacitance
Coss
1.05
pF


Nº de peça semelhante - BF998A

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Vishay Siliconix
BF998A VISHAY-BF998A Datasheet
155Kb / 9P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99
More results

Descrição semelhante - BF998A

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Vishay Siliconix
BF994S VISHAY-BF994S Datasheet
119Kb / 7P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 3, 20-Jan-99
BF966SA VISHAY-BF966SA Datasheet
161Kb / 8P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.5, 15-Apr-05
BF995 VISHAY-BF995 Datasheet
116Kb / 7P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 3, 20-Jan-99
BF961 VISHAY-BF961 Datasheet
160Kb / 7P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.5, 25-Nov-04
logo
Vishay Telefunken
BF966 TFUNK-BF966 Datasheet
396Kb / 10P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode
logo
Vishay Siliconix
BF964S VISHAY-BF964S Datasheet
127Kb / 8P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 3, 20-Jan-99
BF988 VISHAY-BF988 Datasheet
139Kb / 8P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 08-Jul-99
BF998 VISHAY-BF998 Datasheet
155Kb / 9P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 4, 23-Jun-99
BF966S VISHAY-BF966S Datasheet
127Kb / 8P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 3, 20-Jan-99
BF988 VISHAY-BF988_08 Datasheet
157Kb / 9P
   N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Rev. 1.7, 11-Sep-08
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com