Document Number: 91317

www.vishay.com

S-Pending-Rev. A, 21-Jul-08

WORK-IN-PROGRESS

1

Power MOSFET

IRLIZ34G, SiHLIZ34G

Vishay Siliconix

FEATURES

• Isolated Package

f = 60 Hz)

• Sink to Lead Creepage Distance 4.8 mm

• Logic-Level Gate Drive

• Fast Switching

• Ease of paralleling

• Lead (Pb)-free

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

60

0.050

35

7.1

25

Configuration

Single

N-Channel MOSFET

G

D

S

S

D

G

TO-220 FULLPAK

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220 FULLPAK

Lead (Pb)-free

IRLIZ34GPbF

SiHLIZ34G-E3

SnPb

IRLIZ34G

SiHLIZ34G

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 10

Continuous Drain Current

20

A

14

80

Linear Derating Factor

0.28

W/°C

200

mJ

Maximum Power Dissipation

42

W

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply