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SI1303DL_08 Datasheet(Folha de dados) 2 Page - Vishay Siliconix

Nome de Peças. SI1303DL_08
descrição  P-Channel 2.5-V (G-S) MOSFET
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Fbricantes  VISHAY [Vishay Siliconix]
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Document Number: 71075
S-61007–Rev. D, 12-Jun-06
Vishay Siliconix
Si1303DL
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
-0.6
- 1.4
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
- 5
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
- 2.5
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 4.5 V, ID = - 1 A
0.360
0.430
Ω
VGS = - 3.6 V, ID = - 0.7 A
0.400
0.480
VGS = - 2.5 V, ID = - 0.3 A
0.560
0.700
Forward Transconductancea
gfs
VGS = - 10 V, ID = - 1 A
1.7
S
Diode Forward Voltagea
VSD
IS = - 0.3 A, VGS = 0 V
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A
1.7
2.2
nC
Gate-Source Charge
Qgs
0.38
Gate-Drain Charge
Qgd
0.63
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
915
ns
Rise Time
tr
31
45
Turn-Off DelayTime
td(off)
12.5
20
Fall Time
tf
14
20
Source-Drain Reverse Recovery Time
trr
IF = - 1 A, di/dt = 100 A/µs
35
55
Output Characteristics
0
1
2
3
4
5
6
0246
8
VGS = 4.5 V
2 V
VDS - Drain-to-Source Voltage (V)
1, 1.5 V
2.5 V
3 V
3.5 V
4 V
Transfer Characteristics
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TC = - 55 °C
125 °C
25°C
VGS - Gate-to-Source Voltage (V)




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