SI1913EDH datasheet(2/6 Pages) VISHAY

Nome de Peças	SI1913EDH

Descrição Electrónicos	Dual P-Channel 20-V (D-S) MOSFET

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Si1913EDH

Vishay Siliconix

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Document Number: 71415

S-03175—Rev. A, 05-Mar-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –100 mA

–0.45

V

VDS = 0 V, VGS = "4.5 V

"1.5

mA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"10

mA

VDS = –16 V, VGS = 0 V

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = –16 V, VGS = 0 V, TJ = 85_C

–5

mA

On-State Drain Currenta

ID(on)

VDS = –5 V, VGS = –4.5 V

–2

A

VGS = –4.5 V, ID = –0.88 A

0.400

0.490

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –0.71 A

0.610

0.750

W

DS(on)

VGS = –1.8 V, ID = –0.2 A

0.850

1.10

Forward Transconductancea

gfs

VDS = –10 V, ID = –0.88 A

1.5

S

Diode Forward Voltagea

VSD

IS = –0.47 A, VGS = 0 V

–0.85

–1.2

V

Dynamicb

Total Gate Charge

Qg

1.2

1.8

Gate-Source Charge

Qgs

VDS = –10 V, VGS = –4.5 V, ID = –0.88 A

0.3

nC

Gate-Drain Charge

Qgd

0.3

Turn-On Delay Time

td(on)

0.150

0.23

Rise Time

tr

VDD = –10 V, RL = 20 W

0.480

0.72

m

Turn-Off Delay Time

td(off)

VDD = –10 V, RL = 20 W

ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W

0.840

1.2

ms

Fall Time

tf

0.850

1.2

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.001

100

10,000

Gate Current vs. Gate-Source Voltage

0

2

4

6

8

0

4

8

12

16

Gate-Current vs. Gate-Source Voltage

VGS – Gate-to-Source Voltage (V)

0.1

1

10

1,000

VGS – Gate-to-Source Voltage (V)

0

3

9

12

15

TJ = 25_C

TJ = 150_C

0.01

6

Nº de peça semelhante - SI1913EDH

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI1913EDH	44Kb / 5P	Dual P-Channel 20-V (D-S) MOSFET Rev. A, 05-Mar-01
	SI1913EDH	121Kb / 6P	Dual P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI1913EDH	121Kb / 6P	Dual P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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Descrição semelhante - SI1913EDH

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