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SI3424BDV-T1-E3 Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI3424BDV-T1-E3 Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 74623 S-72692-Rev. B, 24-Dec-07 Vishay Siliconix Si3424BDV New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 23.75 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 5.8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 13 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 7 A 0.023 0.028 Ω VGS = 4.5 V, ID = 5.8 A 0.0315 0.038 Forward Transconductance gfs VDS = 15 V, ID = 7 A 17 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 735 pF Output Capacitance Coss 130 Reverse Transfer Capacitance Crss 34 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 7 A 13.05 19.6 nC VDS = 24V, VGS = 4.5 V, ID = 7 A 6.2 9.3 Gate-Source Charge Qgs 2.16 Gate-Drain Charge Qgd 2.15 Gate Resistance Rg f = 1 MHz 2.45 3.7 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 2.7 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 4.5 6.8 ns Rise Time tr 10 15 Turn-Off DelayTime td(off) 16 24 Fall Time tf 7 10.5 Turn-On Delay Time td(on) VDD = 15 V, RL = 3.2 Ω ID ≅ 4.7 A, VGEN = 4.5 V, Rg = 1 Ω 18 27 Rise Time tr 85 128 Turn-Off DelayTime td(off) 17 26 Fall Time tf 12 18 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C 2.48 A Pulse Diode Forward Currenta ISM 30 Body Diode Voltage VSD IS = 3 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 3.2 A, di/dt = 100 A/µs 13.8 20.7 nC Body Diode Reverse Recovery Charge Qrr 6.21 9.32 ns Reverse Recovery Fall Time ta 8.5 Reverse Recovery Rise Time tb 5.3 |
Nº de peça semelhante - SI3424BDV-T1-E3 |
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Descrição semelhante - SI3424BDV-T1-E3 |
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