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SI3433CDV-T1-E3 Folha de dados(PDF) 6 Page - Vishay Siliconix |
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SI3433CDV-T1-E3 Folha de dados(HTML) 6 Page - Vishay Siliconix |
6 / 7 page www.vishay.com 6 Document Number: 68803 S-81950-Rev. A, 25-Aug-08 Vishay Siliconix Si3433CDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68803. Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 0.1 t1 t2 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =110 °C/W 3. TJM -TA =PDMZthJA(t) t1 t2 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 10-3 10-2 1 10 1000 10-1 10-4 100 Square WavePulse Duration (s) 0.1 0.01 1 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 Duty Cycle = 0.5 0.05 0.02 Single Pulse 0.1 1 0.1 0.01 Square WavePulse Duration (s) 10-3 10-2 1 10-1 10-4 |
Nº de peça semelhante - SI3433CDV-T1-E3 |
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Descrição semelhante - SI3433CDV-T1-E3 |
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