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SI3442BDV-T1-E3 Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI3442BDV-T1-E3 Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 72504 S-71947-Rev. D, 10-Sep-07 Vishay Siliconix Si3442BDV Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 5 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 10 A VDS = 5 V, VGS = 2.5 V 4 Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 4 A 0.045 0.057 Ω VGS = 2.5 V, ID = 3.4 A 0.070 0.090 Forward Transconductancea gfs VDS = 10 V, ID = 4.0 A 11.3 S Diode Forward Voltagea VSD IS = 1.6 A, VGS = 0 V 0.75 1.2 V Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 295 pF Output Capacitance Coss 75 Reverse Transfer Capacitance Crss 45 Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 4.0 A 35 nC Gate-Source Charge Qgs 0.65 Gate-Drain Charge Qgd 0.95 Gate Resistance Rg f = 1 MHz 2.7 Ω Turn-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 35 55 ns Rise Time tr 50 75 Turn-Off Delay Time td(off) 20 30 Fall Time tf 15 25 Source-Drain Reverse Recovery Time trr IF = 1.6 A, di/dt = 100 A/µs 30 60 Output Characteristics 0 4 8 12 16 20 0 1234 5 VGS = 5 thru 3.5 V 2.5 V VDS - Drain-to-Source Voltage (V) 3 V 2 V 1.5 V Transfer Characteristics 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) |
Nº de peça semelhante - SI3442BDV-T1-E3 |
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Descrição semelhante - SI3442BDV-T1-E3 |
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