Os motores de busca de Datasheet de Componentes eletrônicos |
|
SI3458BDV Folha de dados(PDF) 4 Page - Vishay Siliconix |
|
SI3458BDV Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 69501 S-72520-Rev. A, 03-Dec-07 Vishay Siliconix Si3458BDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 TJ = 25 °C 100 1.25 1.50 1.75 2.00 2.25 2.50 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) VGS - Gate-to-Source Voltage (V) 0.05 0.10 0.15 0.20 0.25 02468 10 125 °C 25 °C ID = 3.2 A 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 1 0.1 1 10 100 0.01 10 1 ms 0.1 TA = 25 °C Single Pulse 10 ms VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified 100 µs BVDSS Limited 100 100 ms 1 s, 10 s Limited by rDS(on)* DC |
Nº de peça semelhante - SI3458BDV |
|
Descrição semelhante - SI3458BDV |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |