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SI3465DV-T1-E3 Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI3465DV-T1-E3 Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si3465DV Vishay Siliconix New Product www.vishay.com 2 Document Number: 72787 S-40410—Rev. A, 15-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −1.0 −3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V, TJ = 85_C −10 mA On-State Drain Currenta ID(on) VDS v −5 V, VGS = −10 V −20 A Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −4 A 0.065 0.080 W Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −2.7 A 0.140 0.170 W Forward Transconductancea gfs VDS = −15 V, ID = −4 A 6 S Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V −0.8 −1.2 V Dynamicb Total Gate Charge Qg 3.5 5.5 Gate-Source Charge Qgs VDS = −10 V, VGS = −5 V, ID = −4 A 1.3 nC Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 9.5 W Turn-On Delay Time td(on) 9 15 Rise Time tr VDD = −10 V, RL = 10 W 13 20 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W 19 30 ns Fall Time tf 8 15 Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms 20 40 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 012 34 567 0 4 8 12 16 20 0 1234 5 VGS = 10 thru 7 V TC = −55_C 125_C 4 V 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 5 V 6 V |
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