SI3495DV_08 datasheet(2/6 Pages) VISHAY

Nome de Peças	SI3495DV

Descrição Electrónicos	P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET

Download	6 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VISHAY [Vishay Siliconix]

Página de início	http://www.vishay.com

Logo

2 / 6 page

www.vishay.com

2

Document Number: 73135

S-71321-Rev. B, 02-Jul-07

Vishay Siliconix

Si3495DV

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.35

- 0.75

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 85 °C

- 10

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 4.5 V

- 20

A

Drain-Source On-State Resistancea

rDS(on)

VGS = - 4.5 V, ID = - 7 A

0.020

0.024

Ω

VGS = - 2.5 V, ID = - 6.2 A

0.024

0.030

VGS = - 1.8 V, ID = - 5.2 A

0.030

0.038

VGS = - 1.5 V, ID = - 3 A

0.036

0.048

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 7 A

25

S

Diode Forward Voltagea

VSD

IS = - 1.7 A, VGS = 0 V

- 0.62

- 1.1

V

Dynamicb

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 4.5 V, ID = - 7 A

25

38

nC

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

7

Gate Resistance

Rg

48.5

13

Ω

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 10 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω

19

30

ns

Rise Time

tr

36

55

Turn-Off Delay Time

td(off)

200

300

Fall Time

tf

106

160

Source-Drain Reverse Recovery Time

trr

IF = - 1.7 A, di/dt = 100 A/µs

35

60

Output Characteristics

0

4

8

12

16

20

0

1234

5

VGS = 5 thru 2 V

VDS - Drain-to-Source Voltage (V)

1 V

1.5 V

Transfer Characteristics

0

4

8

12

16

20

0.0

0.4

0.8

1.2

1.6

2.0

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Nº de peça semelhante - SI3495DV_08

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	SI3495DV-T1-E3	439Kb / 9P	P-Channel 30-V (D-S) MOSFET
VBsemi Electronics Co.,...	SI3495DV-T1-GE3	450Kb / 9P	P-Channel 30-V (D-S) MOSFET

More results

Descrição semelhante - SI3495DV_08

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI3499DV	91Kb / 6P	P-Channel 1.5-V (G-S) MOSFET Rev. A, 18-Oct-04
	SI5499DC	143Kb / 8P	P-Channel 1.5-V (G-S) MOSFET Rev. B, 04-Feb-08
	SI3499DV	91Kb / 6P	P-Channel 1.5-V (G-S) MOSFET Rev. A, 18-Oct-04
	SI8435DB	120Kb / 8P	P-Channel 1.5-V (G-S) MOSFET Rev. D, 08-Sep-08
	SI3499DV	235Kb / 10P	P-Channel 1.5 V (G-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI6435ADQ-T1-GE3	978Kb / 8P	P-Channel 20-V (G-S) MOSFET
	SI6423DQ-T1-E3	978Kb / 8P	P-Channel 20-V (G-S) MOSFET
	VBC7P2216	474Kb / 8P	P-Channel 20-V (G-S) MOSFET
Vishay Siliconix	SI1469DH	109Kb / 7P	P-Channel 20-V (G-S) MOSFET Rev. A, 29-Jan-07
VBsemi Electronics Co.,...	VBC7P2216	594Kb / 8P	P-Channel 20-V (G-S) MOSFET

More results

SI3495DV Folha de dados(PDF) 2 Page - Vishay Siliconix

SI3495DV Folha de dados(HTML) 2 Page - Vishay Siliconix

Nº de peça semelhante - SI3495DV_08

Descrição semelhante - SI3495DV_08

Html Pages

1 2 3 4 5 6

Folha de dados Download

Ligação URL