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SI5424DC Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças SI5424DC
Descrição Electrónicos  N-Channel 30-V (D-S) MOSFET
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
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Document Number: 73776
S–60216—Rev. A, 20-Feb-06
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 mA
30
V
VDS Temperature Coefficient
DVDS/TJ
ID = 250 mA
19.4
mV/
_C
VGS(th) Temperature Coefficient
DVGS(th)/TJ
ID = 250 mA
– 4.6
mV/
_C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
1.1
2.3
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = " 25 V
"100
ns
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 55 _C
10
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
40
A
Drain Source On State Resistancea
rDS( )
VGS = 10 V, ID = 4.8 A
0.020
0.024
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 4.22 A
0.024
0.030
W
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.8 A
17
S
Dynamicb
Input Capacitance
Ciss
950
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
230
pF
Reverse Transfer Capacitance
Crss
180
p
Total Gate Charge
Q
VDS = 15 V, VGS = 10 V, ID = 4.8 A
21
32
Total Gate Charge
Qg
11
17
nC
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 4.5 V, ID = 4.8 A
3.2
nC
Gate-Drain Charge
Qgd
4.2
Gate Resistance
Rg
f = 1 MHz
2.2
W
Turn-On Delay Time
td(on)
17
26
Rise Time
tr
VDD = 15 V, RL = 2.63 W
75
113
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 2.63 W
ID ^ 5.7 A, VGEN = 4.5 V, Rg = 1 W
22
33
Fall Time
tf
g
12
18
ns
Turn-On Delay Time
td(on)
10
15
ns
Rise Time
tr
VDD = 15 V, RL = 2.5 W
38
57
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 2.5 W
ID ^ 6 A, VGEN = 10 V, Rg = 1 W
26
40
Fall Time
tf
g
9
14
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 _C
6
A
Pulse Diode Forward Current
ISM
40
A
Body Diode Voltage
VSD
IS = 4.3 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
24
36
ns
Body Diode Reverse Recovery Charge
Qrr
IF =43A di/dt = 100 A/msTJ =25 _C
11
17
nC
Reverse Recovery Fall Time
ta
IF = 4.3 A, di/dt = 100 A/ms, TJ = 25 _C
9
ns
Reverse Recovery Rise Time
tb
15
ns
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2 %.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.


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