SI5499DC datasheet(2/8 Pages) VISHAY

Nome de Peças	SI5499DC

Descrição Electrónicos	P-Channel 1.5-V (G-S) MOSFET

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Document Number: 73321

S-80193-Rev. B, 04-Feb-08

Vishay Siliconix

Si5499DC

New Product

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

b. Maximum under Steady State conditions is 95 °C/W.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

t

≤ 5 s

RthJA

48

50

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

17

20

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 8

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = - 250 µA

6

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

2.3

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.35

- 0.8

V

VDS = VGS, ID = - 5 mA

- 0.55

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 8 V, VGS = 0 V

- 1

µA

VDS = - 8 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≤ 5 V, VGS = - 4.5 V

- 25

A

Drain-Source On-State Resistancea

rDS(on)

VGS = - 4.5 V, ID = - 5.1 A

0.030

0.036

Ω

VGS = - 2.5 V, ID = - 4.6 A

0.037

0.045

VGS = - 1.8 V, ID = - 4.3 A

0.046

0.056

VGS = - 1.5 V, ID = - 1.3 A

0.057

0.077

Forward Transconductancea

gfs

VDS = - 4 V, ID = - 5.1 A

18

S

Dynamicb

Input Capacitance

Ciss

VDS = - 4 V, VGS = 0 V, f = 1 MHz

1290

pF

Output Capacitance

Coss

420

Reverse Transfer Capacitance

Crss

270

Total Gate Charge

Qg

VDS = - 4 V, VGS = - 8 V, ID = - 6 A

23

35

nC

VDS = - 4 V, VGS = - 4.5 V, ID = - 6 A

14

21

Gate-Source Charge

Qgs

1.7

Gate-Drain Charge

Qgd

2.7

Gate Resistance

Rg

f = 1 MHz

8

Ω

Turn-On Delay Time

td(on)

VDD = - 4 V, RL = 0.7 Ω

ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω

10

15

ns

Rise Time

tr

70

110

Turn-Off Delay Time

td(off)

60

90

Fall Time

tf

30

45

Turn-On Delay Time

td(on)

VDD = - 4 V, RL = 0.7 Ω

ID ≅ - 5.6 A, VGEN = - 8 V, Rg = 1 Ω

815

Rise Time

tr

70

110

Turn-Off Delay Time

td(off)

55

85

Fall Time

tf

55

85

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