SI5856DC-T1 datasheet(3/7 Pages) VISHAY

Nome de Peças	SI5856DC-T1

Descrição Electrónicos	N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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Si5856DC

Vishay Siliconix

Document Number: 72234

S-50366—Rev. C, 28-Feb-05

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

0

4

8

12

16

20

0.0

0.4

0.8

1.2

1.6

2.0

0

4

8

12

16

20

0

1234

5

VGS = 5 thru 2 V

TC = −55_C

125_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

1 V

1.5 V

0

100

200

300

400

500

600

700

800

04

8

12

16

20

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

1

2

3

4

5

0

123

456

0.00

0.02

0.04

0.06

0.08

0.10

04

8

12

16

20

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 4.4 A

ID − Drain Current (A)

VGS = 4.5 V

ID = 4.4 A

VGS = 1.8 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

VGS = 4.5 V

VGS = 2.5 V

Nº de peça semelhante - SI5856DC-T1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
VBsemi Electronics Co.,...	SI5856DC-T1-E3	1Mb / 8P	Dual N-Channel 20 V (D-S) MOSFET
VBsemi Electronics Co.,...	SI5856DC-T1-GE3	1Mb / 8P	Dual N-Channel 20 V (D-S) MOSFET

More results

Descrição semelhante - SI5856DC-T1

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI5856DC	88Kb / 6P	N-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. B, 24-Nov-03
	SI5855DC	86Kb / 6P	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. A, 07-Jul-03
	SI5855DC	101Kb / 7P	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. B, 17-May-04
	SI5853DC	122Kb / 6P	P-Channel 1.8-V (G-S) MOSFET With Schottky Diode Rev. B, 05-Aug-02
	SI5855DC-T1-E3	188Kb / 9P	P-Channel 1.8 V (G-S) MOSFET with Schottky Diode Rev. C, 08-Mar-10
	SI5853DC-T1-E3	180Kb / 9P	P-Channel 1.8 V (G-S) MOSFET with Schottky Diode Rev. D, 08-Mar-10
	SI1012R	50Kb / 5P	N-Channel 1.8-V (G-S) MOSFET Rev. A, 25-Oct-00
	SI1012R	94Kb / 6P	N-Channel 1.8-V (G-S) MOSFET Rev. B, 28-Feb-05
	SI1012R	172Kb / 8P	N-Channel 1.8 V (G-S) MOSFET Rev. E, 15-Apr-13
Leshan Radio Company	LSI1012XT1G	324Kb / 6P	N-Channel 1.8-V (G-S) MOSFET

More results

SI5856DC-T1 Folha de dados(PDF) 3 Page - Vishay Siliconix

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