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SS10P3C Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SS10P3C Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product SS10P3C & SS10P4C Vishay General Semiconductor Document Number: 89035 Revision: 30-Jul-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Halogen-free MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94V-0 flammability rating. Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC-Q101 qualified) Base P/N-M3 - halogen-free and RoHS compliant, commercial grade Base P/NHM3 - halogen-free and RoHS compliant, high reliability/automotive grade (AEC-Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 and M3 suffix meets JESD 201 class 1A whisker test, HE3 and HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 2 x 5.0 A VRRM 30 V, 40 V IFSM 200 A EAS 20 mJ VF at IF = 5 A 0.37 V TJ max. 150 °C TO-277A (SMPC) K 2 1 Anode 1 Anode 2 Cathode K eSMPTM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS10P3C SS10P4C UNIT Device marking code S103C S104C Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum average forward rectified current (Fig. 1) total device per diode IF(AV) 10 5.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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Descrição semelhante - SS10P3C |
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