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ST650C24L2L Folha de dados(PDF) 2 Page - Vishay Siliconix |
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ST650C24L2L Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93738 2 Revision: 13-Aug-08 ST650C..L Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 790 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave Double side (single side) cooled 790 (324) A 55 (85) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1857 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 10 100 t = 8.3 ms 10 700 t = 10 ms 100 % VRRM reapplied 8600 t = 8.3 ms 9150 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 510 kA2s t = 8.3 ms 475 t = 10 ms 100 % VRRM reapplied 370 t = 8.3 ms 347 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 5100 kA2 √s Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 1.04 V High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ = TJ maximum 1.13 Low level value of on-state slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.61 m Ω High level value of on-state slope resistance rt2 (I > π x I T(AV)), TJ = TJ maximum 0.35 Maximum on-state voltage VTM Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, t r ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Maximum turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs VR = 50, dV/dt = 20 V/µs, Gate 0 V 100 Ω, tp = 500 µs 200 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA |
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