BAS16-V-GS18 datasheet(2/5 Pages) VISHAY

Nome de Peças	BAS16-V-GS18

Descrição Electrónicos	Small Signal Fast Switching Diode

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Document Number 85539

Rev. 1.5, 09-Mar-06

BAS16-V

Vishay Semiconductors

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

on ceramic substrate

8 mm x 10 mm x 0.7 mm

RthJA

357

K/W

Junction and storage

temperature range

Tj = Tstg

- 55 to + 150

°C

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 1 mA

VF

715

mV

IF = 10 mA

VF

855

mV

IF = 50 mA

VF

1V

IF = 150 mA

VF

1.25

V

Reverse current

VR = 75 V

IR

1µA

VR = 75 V, Tj = 150 °C

IR

50

µA

VR = 25 V, Tj = 150 °C

IR

30

µA

Diode capacitance

VR = 0, f = 1 MHz

CD

4pF

Reverse recovery time

IF = 10 mA to IR = 1 mA,

VR = 6 V, RL = 100 Ω

trr

6ns

Figure 1. Forward Current vs. Forward Voltage

0.01

0.1

1

10

100

1000

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF - Forward Voltage (V)

14356

= 100 °C

Tj

25 °C

Figure 2. Reverse Current vs. Junction Temperature

1

10

100

1000

10000

0

25

50

75

100 125 150 175 200

Tj –Junction Temperature (°C)

14357

VR =20 V

Nº de peça semelhante - BAS16-V-GS18

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	BAS16-V-GS08	140Kb / 5P	Small Signal Fast Switching Diode Rev. 1.5, 09-Mar-06

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Descrição semelhante - BAS16-V-GS18

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BAS16-V-GS18 Folha de dados(PDF) 2 Page - Vishay Siliconix

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Nº de peça semelhante - BAS16-V-GS18

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