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IRF6N40 Folha de dados(PDF) 3 Page - Suntac Electronic Corp. |
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IRF6N40 Folha de dados(HTML) 3 Page - Suntac Electronic Corp. |
3 / 3 page IRF6N40 POWER MOSFET SmartStar Technology, Inc. 2 Figure 1. Id versus Vds Curve Figure 2. Rdon versus Tj Curve Figure 3. Vgs versus Qg Curve Figure 4. Capacitor versus Vds Curve 0 2 4 6 8 10 12 0.00 10.00 20.00 30.00 Total Gate Charge, Qg (nC) Vds = 320 V Id = 5.5 A 1 10 100 1000 10000 1.0 10.0 100.0 1000.0 Drain-to-Source Voltage , Vds (V) Tc = 25 C f = 1 MHz Vgs = 0 V Ciss =Cgd+Cgs Cos s=Cds+Cgd Cr ss=Cgd 0 2 4 6 8 10 12 0.1 1 10 Drain-to-Source Voltage, Vds (V) Tc = 25 C Pulsewidth =20us Vgs = 10V (Top), 8V, 7V, 6V 5.5V, 5V, 4.5V (Bottom) 0 0.5 1 1.5 2 2.5 3 -60 -20 20 60 100 140 Junction Tem pe rature , Tj (C) Vgs = 10 V Id = 5.5 A Figure 5. Transient thermal impedance Curve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (second) Duty Cycle = 0.5 (Top), 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse (Bottom) Page 3 TYPICAL ELECTRICAL CHARACTERISTICS |
Nº de peça semelhante - IRF6N40 |
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Descrição semelhante - IRF6N40 |
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