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IRF6N60 Folha de dados(PDF) 1 Page - Suntac Electronic Corp. |
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IRF6N60 Folha de dados(HTML) 1 Page - Suntac Electronic Corp. |
1 / 5 page GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION SYMBOL TO-220/TO-220FP Front View 1 23 D S G N-Channel MOSFET IRF6N60 POWER MOSFET Page 1 |
Nº de peça semelhante - IRF6N60 |
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Descrição semelhante - IRF6N60 |
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