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STB12NM50 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STB12NM50 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 14 page 3/14 STP12NM50 - STP12NM50FP - STB12NM50 - STB12NM50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V , ID = 6 A 5.5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1000 180 25 pF pF pF COSS eq (3). Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 400 V 90 pF td(on) tr Turn-on Delay Time Rise Time VDD = 250 V, ID = 6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) 20 10 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 12 A, VGS = 10 V (see Figure 20) 28 8 18 39 nC nC nC Rg Gate Input Resistance f = 1MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 1.6 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 12 48 A A VSD (1) Forward On Voltage ISD = 12 A, VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100 A/µs VDD = 100V (see Figure 18) 270 2.23 16.5 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100 A/µs VDD = 100V, Tj = 150°C (see Figure 18) 340 3 18 ns µC A |
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