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ST1N60-251 Folha de dados(PDF) 2 Page - Suntac Electronic Corp. |
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ST1N60-251 Folha de dados(HTML) 2 Page - Suntac Electronic Corp. |
2 / 4 page ST1N60 POWER MOSFET Page 2 ORDERING INFORMATION Part Number Package .................ST1N60-251...........................................TO-251 .................ST1N60-252...........................................TO-252 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . CST1N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) V(BR)DSS 600 V Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125 ) IDSS 0.1 0.3 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 A) VGS(th) 2.0 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) * RDS(on) 8.0 Forward Transconductance (VDS 50 V, ID = 0.5A) * gFS 0.5 mhos Input Capacitance Ciss 210 pF Output Capacitance Coss 28 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 4.2 pF Turn-On Delay Time td(on) 8 ns Rise Time tr 21 ns Turn-Off Delay Time td(off) 18 ns Fall Time (VDD = 300 V, ID = 1.0 A, VGS = 10 V, RG = 18 ) * tf 24 ns Total Gate Charge Qg 8.5 14 nC Gate-Source Charge Qgs 1.8 nC Gate-Drain Charge (VDS = 400 V, ID = 1.0 A, VGS = 10 V)* Qgd 4 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.5 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS = 1.0 A, VGS = 0 V, dIS/dt = 100A/µs) trr 350 500 ns * Pulse Test: Pulse Width 300µs, Duty Cycle 2% ** Negligible, Dominated by circuit inductance |
Nº de peça semelhante - ST1N60-251 |
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Descrição semelhante - ST1N60-251 |
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