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2SC4180 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4180 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type Transistors 1 www.kexin.com.cn 1 Emitter 2 Base 3 Collector NPN Silicon Epitaxial Transistor 2SC4180 Features Small dimension High DC current gain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5V Collector current IC 50 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55to+150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 120V, IE=0 0.05 ìA Emitter cutoff current IEBO VEB =5V, IC=0 0.05 ìA VCE =6V , IC = 1mA* 135 600 900 VCE =6V , IC = 0.1mA 100 580 Collector-emitter saturation voltage * VCE(sat) IC = 10mA , IB = 1mA 0.07 0.3 V Base-emitter voltage * VBE VCE =6V , IC = 1mA 0.55 0.59 0.65 V Gain bandwidth product fT VCE =6V , IE = -1mA 50 110 MHz Output capacitance Cob VCB = 30V , IE = 0 , f = 1.0MHz 1.6 2.5 pF * Pulse test: tp 350 ìs; d 0.02. DC current gain hFE hFE Classification Marking D15 D16 D17 D18 hFE 135 270 200 400 300 600 450 900 |
Nº de peça semelhante - 2SC4180 |
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Descrição semelhante - 2SC4180 |
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