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BAT854SW Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BAT854SW Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type www.kexin.com.cn 1 Diodes Schottky barrier (double) diodes BAT854W;BAT854AW BAT854CW;BAT854SW Features Very low forward voltage Very low reverse current Guard ring protected Very small SMD package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Continuous reverse voltage VR 40 V Continuous forward current IF 200 mA Repetitive peak forward current IFRM tp 1s; d 0.5 300 mA Non-repetitive peak forward current IFSM t = 8.3 ms half sinewave;JEDEC method 1 A Storage temperature Tstg -65 +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 +150 Thermal resistance from junction to ambient Rth j-a 625 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit IF = 0.1 mA 200 IF = 1 mA 260 IF = 10 mA 340 IF = 30 mA 420 IF = 100 mA 550 Continuous reverse current IR VR = 25 V; Note 1 0.5 A Diode capacitance Cd f=1MHz;VR =1V 20 pF Note 1. Pulse test: tp 300 s; ä 0.02. mV VF Forward voltage Marking Type BTA854W BAT854AW BAT854CW BAT854SW Marking 81828384 |
Nº de peça semelhante - BAT854SW |
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Descrição semelhante - BAT854SW |
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