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2SJ130S Folha de dados(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ130S Folha de dados(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page www.kexin.com.cn 2 SMD Type IC SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain to source breakdown voltage V(BR)DSS ID =-10 mA, VGS = 0 -300 V Gate to source breakdown voltage V(BR)GSS IG = 100 A, VDS =0 20 V Gate to source leak current IGSS VGS = 16 V, VDS =0 10 A Zero gate voltage drain current IDSS VDS = -240 V, VGS = 0 -100 A Gate to source cutoff voltage VGS(off) ID =-1mA, VDS =-10 V -2 -4 V Static Drain to source on stateresistance RDS(on) ID =-0.5A, VGS = -10 V 6.0 8.5 Forward transfer admittance |yfs| ID =-0.5A, VDS = -20 V 0.25 0.4 S Input capacitance Ciss VDS =-10 V, VGS = 0, 235 pF Output capacitance Coss f = 1 MHz 65 pF Reverse transfer capacitance Crss 16 pF Turn-on delay time td(on) ID =-0.5A, VGS = -10 V, 10 ns Rise time tr RL = 60 Ù 25 ns Turn-off delay time td(off) 35 ns Fall time tf 45 ns Body to drain diode forward voltage VDF IF =-1A, VGS =0 -0.9 V Body to drain diode reverse recovery time trr IF =-1A, VGS = 0,diF/dt= 50 A/ s 200 ns 2SJ130S |
Nº de peça semelhante - 2SJ130S |
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Descrição semelhante - 2SJ130S |
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