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TC4404CPA Folha de dados(PDF) 2 Page - TelCom Semiconductor, Inc |
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TC4404CPA Folha de dados(HTML) 2 Page - TelCom Semiconductor, Inc |
2 / 6 page 4-220 TELCOM SEMICONDUCTOR, INC. ABSOLUTE MAXIMUM RATINGS Supply Voltage ......................................................... +22V Maximum Chip Temperature ................................. +150 °C Storage Temperature Range ................ – 65 °C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300 °C ELECTRICAL CHARACTERISTICS: Specifications measured at TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input VIH Logic 1 High Input Voltage 2.4 — — V VIL Logic 0 Low Input Voltage — — 0.8 V IIN Input Current – 0V ≤ V IN ≤ V DD – 1 — 1 µA Output VOH High Output Voltage VDD – 0.025 — — V VOL Low Output Voltage — — 0.025 V RO Output Resistance IOUT = 10 mA,VDD = 18V; Any Drain — 7 10 Ω IPK Peak Output Current (Any Drain) Duty cycle < 2%, t ≤ 300µsec — 1.5 — A IDC Continuous Output Current (Any Drain) — — 100 mA IR Latch-Up Protection (Any Drain) Duty cycle < 2%, t ≤ 300µsec > 500 — — mA Withstand Reverse Current Switching Time (Note 1) tR Rise Time Figure 1, CL = 1000 pF — 25 30 nsec tF Fall Time Figure 1, CL = 1000 pF — 25 30 nsec tD1 Delay Time Figure 1, CL = 1000 pF — 15 30 nsec tD2 Delay Time Figure 1, CL = 1000 pF — 32 50 nsec Power Supply IS Power Supply Current VIN = 3V (Both Inputs) — — 4.5 mA VIN = 0V (Both Inputs) — — 0.4 NOTE: 1. Switching times guaranteed by design. thus minimizing chip count. Unused open drains should be returned to the supply rail that their device sources are connected to (pull-downs to ground, pull-ups to VDD), to prevent static damage. In addition, in situations where timing resistors or other means of limiting crossover currents are used, like drains may be paralleled for greater current carrying capacity. These devices are built to operate in the most de- manding electrical environments. They will not latch up under any conditions within their power and voltage rat- ings; they are not subject to damage when up to 5V of noise spiking of either polarity occurs on their ground pin; and they can accept, without damage or logic upset, up to 1/2 amp of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 2 kV of electrostatic discharge. Package Thermal Resistance CerDIP RθJ-A ............................................... 150°C/W CerDIP RθJ-C ................................................. 55°C/W PDIP RθJ-A .................................................. 125°C/W PDIP RθJ-C .................................................... 45°C/W SOIC RθJ-A .................................................. 155°C/W SOIC RθJ-C .................................................... 45°C/W Operating Temperature Range C Version ............................................... 0 °C to +70°C E Version .......................................... – 40 °C to +85°C M Version ....................................... – 55 °C to +125°C Package Power Dissipation (TA ≤ 70°C) Plastic ............................................................. 730mW CerDP ............................................................. 800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. TC4404 TC4405 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS |
Nº de peça semelhante - TC4404CPA |
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Descrição semelhante - TC4404CPA |
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