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1N4448-TAP Folha de dados(PDF) 1 Page - Vishay Siliconix

Nome de Peças 1N4448-TAP
Descrição Electrónicos  Silicon Epitaxial Planar Diodes
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
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1N4448-TAP Folha de dados(HTML) 1 Page - Vishay Siliconix

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1N4148.1N4448
Vishay Telefunken
Rev. 2, 01-Apr-99
1 (4)
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 85521
Silicon Epitaxial Planar Diodes
Features
D Electrically equivalent diodes: 1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
100
V
Reverse voltage
VR
75
V
Peak forward surge current
tp=1ms
IFSM
2
A
Repetitive peak forward current
IFRM
500
mA
Forward current
IF
300
mA
Average forward current
VR=0
IFAV
150
mA
Power dissipation
l=4mm, TL=45°C
PV
440
mW
l=4mm, TLx25°C
PV
500
mW
Junction temperature
Tj
200
°C
Storage temperature range
Tstg
–65...+200
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
l=4mm, TL=constant
RthJA
350
K/W


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