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BCX69-16 Folha de dados(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças BCX69-16
Descrição Electrónicos  PNP Silicon AF Transistors
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BCX69-16 Folha de dados(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
Transistors
www.kexin.com.cn
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
V(BR)CEO
IC =30mA, IB =0
20
V
Collector-base breakdown voltage
V(BR)CBO
IC =10ìA, IB =0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE =1ìA, IC =0
5
V
VCB =25V, IE = 0
100
nA
VCB =25V, IE =0, TA = 150
100
ìA
DC current gain *
hFE
IC =5mA, VCE =10V
50
BCX69
85
375
DC current gain *
BCX69-10
85
100
160
BCX69-16
100
160
250
BCX69-25
160
250
375
DC current gain *
hFE
IC =1A, VCE =1V
60
Collector-emitter saturation voltage *
VCE(sat)
IC =1A, IB = 100 mA
0.5
Base-emitter voltage
*
VBE(ON)
IC =5mA, VCE =10V
0.6
IC =1A, VCE =1V
1
Transition frequency
fT
IC = 100 mA, VCE = 5 V, f = 20 MHz
100
MHz
* Pulse test: t
300ìs, D = 2%.
V
ICBO
Collector cutoff current
hFE
IC = 500 mA, VCE =1V
BCX69
hFE Classification
TYPE
BCX69
BCX69-10
BCX69-16
BCX69-25
Marking
CE
CF
CG
CH


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