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2SD1254 Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SD1254
Descrição Electrónicos  Silicon NPN epitaxial planar type
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SD1254 Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SD1254 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Base
2 Collector
3 Emitter
www.kexin.com.cn
Silicon NPN epitaxial planar type
2SD1254
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory linearity of forward current transfer ratio hFE.
Large collector current IC.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
130
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
7V
Collector current
IC
3A
Peak collector current
ICP
6A
Collector power dissipation
30
W
Ta = 25
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
PC
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter voltage
VCEO
IC =10mA, IB =0
80
V
Collector-base cutoff current
ICBO
VCB =100 V, IE =0
10
ìA
Emitter-base cutoff current
IEBO
VEB =5V, IC =0
50
ìA
Forward current transfer ratio
VCE =2V, IC =0.5 A
60
260
Forward current transfer ratio
VCE =2V, IC =0.1 A
45
Collector-emitter saturation voltage
VCE(sat) IC =2A, IB = 0.1 A
0.5
V
Base-emitter saturation voltage
VBE(sat) IC =2A, IB = 0.1 A
1.5
V
Transition frequency
fT
VCE =10V, IC = 0.5 A,f= 10 MHz
30
MHz
Turn-on time
ton
IC=0.5A
0.5
ìs
Storage time
tstg
IB1=-IB2=50 mA
2.5
ìs
Fall time
tf
VCC=50V
0.15
ìs
hFE
hFE Classification
Rank
R
Q
P
hFE
60
120
90
180
130
260


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