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2SC2411K Folha de dados(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Nome de Peças 2SC2411K
Descrição Electrónicos  Medium Power Transistor
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Fabricante Electrônico  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Página de início  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC2411K Folha de dados(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC2411K Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
www.kesenes.com
1
0.4+0.1
-0.1
2.9+0.1
-0.1
0.95+0.1
-0.1
1.9+0.1
-0.1
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1+0.05
-0.01
www.kexin.com.cn
Medium Power Transistor
2SC2411K
Features
High ICMax.ICMax. = 0.5A
Low VCE(sat). Optimal for low voltage operation.
NPN silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5V
Collector current *
IC
0.5
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
*PC must not be exceeded.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC = 100ìA
40
V
Collector-emitter breakdown voltage
VCEO
IC =1mA
32
V
Emitter-base breakdown voltage
VEBO
IE = 100ìA
5
V
Collector cutoff current
ICBO
VCB = 20V
1
A
Emitter cutoff current
IEBO
VEB =4V
1
A
DC current gain
hFE
VCE =3V, IC = 100mA
120
390
Collector-emitter saturation voltage
VCE(sat) IC/IB = 500mA/50mA
0.6
V
Output capacitance
Cob
VCB = 10V, IE = 0A, f = 1MHz
6.5
pF
Transition frequency
fT
VCE =5V, IE = -20mA, f = 100MHz
250
MHz
hFE Classification
Marking
CQ
CR
Rank
Q
R
hFE
120
270
180
390


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