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2SA1112 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1112 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA1111 -150 V(BR)CEO Collector-emitter breakdown voltage 2SA1112 IC=-0.1mA ,IB=0 B -180 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 -2.0 V VBEsat Base-emitter saturation voltage IC=-0.5A; IB=-50mA -1.0 -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1 μA hFE-1 DC current gain IC=-150mA ; VCE=-10V 65 330 hFE-2 DC current gain IC=-500mA ; VCE=-5V 50 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 30 pF fT Transition frequency IC=50mA ; VCE=-10V 200 MHz hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 2 |
Nº de peça semelhante - 2SA1112 |
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Descrição semelhante - 2SA1112 |
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