MJ11031 datasheet(1/2 Pages) ISC

Nome de Peças	MJ11031

Descrição Electrónicos	isc Silicon PNP Darlington Power Transistor

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Darlington Power Transistor

MJ11031

DESCRIPTION

·Collector-Emitter Breakdown Voltage

: V(BR)CEO= -90V(Min.)

·High DC Current Gain-

: hFE= 1000(Min.)@IC= -25A

: hFE= 400(Min.)@IC= -50A

·Complement to Type MJ11030

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-90

V

VCEO

Collector-Emitter Voltage

-90

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continunous

-50

A

ICM

Collector Current-Peak

-100

A

IB

Base Current-Continunous

-2

A

PC

Collector Power Dissipation

@TC=25℃

300

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-55~+200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.584

℃/W

Nº de peça semelhante - MJ11031

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Mospec Semiconductor	MJ11031	154Kb / 3P	POWER TRANSISTOR(50A,60-120V,300W)
Motorola, Inc	MJ11031	153Kb / 4P	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS
ON Semiconductor	MJ11031	153Kb / 4P	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 1995
Seme LAB	MJ11031	59Kb / 2P	COMPLEMENTARY DARLINGTON POWER TRANSISTOR

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Descrição semelhante - MJ11031

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