STU411D datasheet(3/11 Pages) SAMHOP

Nome de Peças	STU411D

Descrição Electrónicos	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Fabricante Electrônico	SAMHOP [SamHop Microelectronics Corp.]

Página de início	http://www.samhop.com.tw

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4 Symbol

Min

Typ

Max

Units

BVDSS

-40

V

-1

IGSS

±10

uA

VGS(th)

-1.25

V

38

gFS

9

S

VSD

CISS

895

pF

COSS

138

pF

CRSS

67

pF

Qg

14

nC

14

nC

Qgs

54

nC

Qgd

10

tD(ON)

14.5

ns

tr

2.1

ns

tD(OFF)

3.4

ns

tf

ns

Gate-Drain Charge

VDS=-20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=-20V

ID=-1A

VGS=-10V

RGEN=3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=-20V,ID=-12A,VGS=-10V

Fall Time

Turn-On Delay Time

m ohm

VGS=-10V , ID=-12A

VDS=-5V , ID=-12A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=-250uA

VDS=-32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

-3

VGS=-4.5V , ID=-10A

48

52

68

m ohm

c

f=1.0MHz

c

VDS=-20V,ID=-12A,

VGS=-10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=-2.0A

-0.77

-1.2

V

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13)

_

STU411D

Ver 1.0

www.samhop.com.tw

Sep,04,2008

3

nC

VDS=-20V,ID=-12A,VGS=-4.5V

7

_

-1.6

b

IS

Maximum Continuous Drain-Source Diode Forward Current

A

-2.0

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