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STD434S Folha de dados(PDF) 3 Page - SamHop Microelectronics Corp.

Nome de Peças STD434S
Descrição Electrónicos  N-Channel Logic Level Enhancement Mode Field Effect Transistor
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Fabricante Electrônico  SAMHOP [SamHop Microelectronics Corp.]
Página de início  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STD434S Folha de dados(HTML) 3 Page - SamHop Microelectronics Corp.

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STU/D434S
Ver 1.0
www.samhop.com.tw
Nov,14,2008
3
T j ( °
C )
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
with Temperature
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
100
V GS =10V
V GS =3V
V GS =2.5V
V GS =3.5V
V GS =4V
60
48
36
24
0
0
0.7
1.4
2.1
2.8
3.5
4.2
12
25 C
-55 C
T j=125 C
16
12
8
4
1
20
40
60
80
100
1
VGS=10V
VGS=4.5V
20
2.0
1.8
1.6
1.4
1.2
1.0
0
0
25
50
125
100
75
VGS=10V
ID=25A
VGS=4.5V
ID=20A
150
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100 125 150
V DS =V GS
ID=250uA
-50
-25
0
25
50
75
100 125 150
1.40
1.30
1.20
1.10
1.00
0.90
0.80
ID=250uA


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