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2SC1568 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1568 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1568 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1A ;IB=50m A B 0.5 V VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50m A 1.2 V V(BR)CBO Collector-base breakdown voltage IC=10μA;IE=0 18 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 18 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 5 V hFE-1 DC current gain IC=500mA ; VCE=2V 90 280 hFE-2 DC current gain IC=1.5A ; VCE=2V 50 ICBO Collector cut-off current VCB=10V ; IE=0 1 μA ICEO Collector cut-off current VCE=18V ; IB=0 10 μA COB Output capacitance IE=0; VCB=6V; f=1MHz 12 pF fT Transition frequency IE=-50mA ;VCB=6V;f=200MHz 150 MHz hFE-1 classifications Q R S 90-155 130-210 180-280 2 |
Nº de peça semelhante - 2SC1568 |
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