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2SC2151 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2151 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2151 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 2.0 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=7.5A ; VCE=5V 10 fT Transition frequency IC=0.5A ; VCE=10V 15 MHz |
Nº de peça semelhante - 2SC2151 |
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Descrição semelhante - 2SC2151 |
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