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2SD1711 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1711 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1711 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA;IB=0 800 V VCEsat Collector-emitter saturation voltage IC=4.5A;IB=2 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A;IB=2 A 1.5 V IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA ICBO Collector cut-off current VCB=800V; IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1 mA hFE DC current gain IC=0.5 A ; VCE=5V 10 40 |
Nº de peça semelhante - 2SD1711 |
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Descrição semelhante - 2SD1711 |
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